TOKYO, June 12, 2025 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today announced today that it has developed a world’s first¹ compact 7GHz band gallium nitride (GaN) power amplifier module (PAM) with the world’s highest¹ power efficiency, which is expected to enhance the ease of installation as well as the power efficiency of 5G-Advanced base stations and thereby support the transition to 6G. Mitsubishi Electric successfully verified its new PAM’s performance in a demonstration using 5G-Advanced communication signals for the first time in the world.¹

Mitsubishi Electric developed its 7GHz GaN PAM using proprietary matching-circuit technology and high-performance GaN transistors. The compact module measures only 12.0mm x 8.0mm (prototype) thanks to the high-density mounting of components, which will enhance the installation efficiency of 5G-Advanced base stations. Going forward, Mitsubishi Electric will continue research and development aimed at the practical application of the PAM in 5G-Advanced base stations.

Technical details will be presented at the IEEE International Microwave Symposium 2025, which will be held June 15–20 in San Francisco, CA, USA. In addition, a joint live demonstration with Wupatec will be conducted at the event’s exhibition venue.

¹ According to Mitsubishi Electric research as of June 12, 2025.